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Cambridge Dielectrix

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Next-generation dielectric technology for atomically thin semiconductor transistors

To meet the demand for faster, smaller, and more energy-efficient electronics, Cambridge Dielectrix has developed a new insulating oxide that enables atomically thin semiconductors to be used reliably in advanced transistors. The innovation overcomes a key barrier in the miniaturisation of devices: creating a stable, ultra-clean interface between materials. Compatible with industrial-scale manufacturing, the technology supports next-generation architectures like CFETs and has the potential to transform computing, memory, and AI hardware by improving speed, efficiency, and scalability

Team

  • Maheera Abdul Ghani

    Maheera Abdul Ghani

    University of Cambridge

    Dr. Maheera Abdul Ghani completed her PhD in Materials Science at the University of Cambridge and she is the co-founder/CEO of the spin-out, Cambridge Dielectrix. She brings 5+ years of research experience of working in nanomaterials and has successfully worked with early-stage technology development.Peviously, she is recipient of Erasmus Mundus Scholarship by European Union in 2021 for Double Master’s degree in advanced Functional Materials Engineering from TU Darmstadt, Germany and Grenoble INP, France.She is now leading the early-stage developmenr of gate dielectric technology specifically engineered to overcome challenge of defective interfaces with atomically thin semiconductors.more


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